Lenovo LN860 256GB PCIe Gen3 NVMe M.2 2280 SSD

The Lenovo LN860 256GB NVMe SSD is an M.2 2280 internal solid-state drive built on a PCIe Gen3 x4 interface with NVMe 1.4 protocol support. Designed for mainstream laptops and desktops requiring a fast, compact storage upgrade, it delivers sequential read speeds of up to 3100 MB/s and sequential write speeds of up to 1800 MB/s — a significant leap over conventional SATA-based drives. The LN860 uses a DRAM-less architecture paired with Host Memory Buffer (HMB) technology, which allows the drive to utilise a portion of the host system’s RAM as a cache buffer. This design reduces effective latency and sustains consistent performance during everyday workloads such as file transfers, application launches, and lighter gaming sessions, without the added cost or power draw of drive DRAM. Storage media is 3D NAND, providing a solid endurance rating of 200 TBW (Terabytes Written) for the 256 GB capacity. The drive is rated at an MTBF of 1,500,000 hours, indicating a robust reliability baseline for daily use. The single-sided PCB keeps the drive thickness under 2.5 mm (2.40 mm measured), making it compatible with ultrathin and ultrabook-class laptops that impose strict clearance requirements. Its standard M.2 2280 footprint (80 × 22 mm) ensures broad motherboard compatibility. Power consumption is modest: up to 2.0 W during reads, up to 2.2 W during writes, and as low as 0.5 mW at idle — figures that help preserve battery life in portable systems. The drive operates within 0 °C to 70 °C and is rated for shock resistance of 100 G over 6 ms and vibration resistance of 3.1 GRMS (2–500 Hz), providing confidence in mobile use scenarios. Lenovo bundles Biwin Intelligence Software with this drive, offering utilities for performance testing, data migration, and drive cloning — practical tools when migrating from an older storage device. Verified Specifications: • Capacity: 256 GB • Form Factor: M.2 2280 • Interface: PCIe Gen3 x4, NVMe 1.4 • Sequential Read: Up to 3100 MB/s • Sequential Write: Up to 1800 MB/s • 4K Random Read: Up to 240,000 IOPS • 4K Random Write: Up to 290,000 IOPS • Endurance (TBW): 200 TB • MTBF: 1,500,000 hours • Power (Read): 2.0 W | Power (Write): 2.2 W | Idle: 0.5 mW • Dimensions: 80.00 × 22.00 × 2.40 mm • Operating Temperature: 0 °C to 70 °C • Storage Temperature: −40 °C to 85 °C • Shock Resistance: 100 G / 6 ms • Vibration Resistance: 3.1 GRMS (2–500 Hz) • Warranty: 5 Years