SAMSUNG 970 EVO Plus 1TB M.2 NVME Gen3 Solid State Drive ( SSD )

The Samsung 970 EVO Plus 1TB M.2 NVMe Gen3 SSD (model MZ-V7S1T0BW) is a high-performance internal solid-state drive built for desktop and laptop users who demand responsive, reliable storage. Running on the PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol, it delivers sequential read speeds of up to 3,500 MB/s and sequential write speeds of up to 3,300 MB/s — a meaningful step up over its predecessor, the 970 EVO. Random read and write performance reaches up to 600,000 IOPS and 550,000 IOPS respectively (4KB, QD32), making this drive well-suited for workloads that involve frequent small-file access such as OS boot, application launches, and gaming level loads. At the core of the 970 EVO Plus is Samsung’s proprietary Phoenix controller, paired with Samsung V-NAND 3-bit MLC (TLC) NAND flash and a 1 GB Low Power DDR4 SDRAM cache. The Intelligent TurboWrite technology leverages a high-speed write buffer to maintain sustained throughput during large sequential transfers. Thermal management is handled by Samsung’s nickel-coated controller and a built-in Dynamic Thermal Guard, which continuously monitors operating temperature and adjusts performance to stay within safe thermal limits — helping prevent throttling during extended use. The drive occupies the compact M.2 2280 form factor (80.15 × 22.15 × 2.38 mm), making it compatible with most modern motherboards and ultrabook platforms without any additional hardware. Security is addressed through AES 256-bit hardware encryption with TCG/Opal and IEEE 1667 (encrypted drive) support. TRIM and S.M.A.R.T. are both supported, and an Auto Garbage Collection algorithm helps preserve long-term write performance. Verified Specifications: – Model: MZ-V7S1T0BW – Capacity: 1 TB – Interface: PCIe Gen 3.0 x4, NVMe 1.3 – Form Factor: M.2 2280 – Sequential Read: Up to 3,500 MB/s – Sequential Write: Up to 3,300 MB/s – Random Read (4KB QD32): Up to 600,000 IOPS – Random Write (4KB QD32): Up to 550,000 IOPS – NAND Type: Samsung V-NAND 3-bit MLC – Cache: Samsung 1 GB LPDDR4 SDRAM – Controller: Samsung Phoenix – Endurance (TBW): 600 TBW – MTBF: 1.5 million hours – Encryption: AES 256-bit, TCG/Opal, IEEE 1667 – Operating Temperature: 0–70 °C – Shock Resistance: 1,500 G / 0.5 ms (half sine) – Warranty: 5 years limited The Samsung Magician software companion allows users to monitor drive health, check performance, and apply firmware updates. This drive is suited to client PC applications including creative workstations, gaming rigs, and productivity machines seeking a significant storage upgrade over SATA alternatives