SAMSUNG 970 EVO Plus 500GB M.2 NVME Gen 3 Solid State Drive ( SSD )

The Samsung 970 EVO Plus 500GB is a high-performance internal NVMe solid-state drive built on Samsung’s 3-bit V-NAND technology. Designed for client PCs — desktops and laptops — it connects via a PCIe Gen 3.0 x4 interface supporting the NVMe 1.3 protocol, slotting into a compact M.2 (2280) form factor that measures 80.15 x 22.15 x 2.38 mm. At the heart of the drive is Samsung’s proven Phoenix controller paired with 512 MB of low-power DDR4 SDRAM cache, enabling Intelligent TurboWrite technology to sustain high speeds during demanding workloads. Sequential read performance reaches up to 3,500 MB/s and sequential write performance reaches up to 3,300 MB/s, delivering a substantial step up over both SATA SSDs and earlier NVMe generations. For the 500GB capacity, random 4K read and write IOPS at Queue Depth 32 reach up to 600,000 and 550,000 respectively. At Queue Depth 1, random read tops 19,000 IOPS and random write reaches 60,000 IOPS — figures relevant for everyday desktop responsiveness such as application launches and file opens. Thermal management is handled by Samsung’s nickel-coated controller and a built-in heat spreader, while the Dynamic Thermal Guard automatically monitors operating temperatures and adjusts behaviour to maintain stability within the rated 0–70 °C range. The drive operates at 3.3 V (±5%). Data integrity is supported through AES 256-bit hardware encryption (TCG/Opal, IEEE 1667 compliant), TRIM support, S.M.A.R.T. monitoring, and an automatic garbage-collection algorithm that helps preserve long-term write performance. Device Sleep Mode support reduces power draw during idle periods. Reliability is rated at 1.5 million hours MTBF, and the drive ships with a 5-year limited warranty from Samsung. The Samsung Magician software (available separately) provides drive health monitoring, firmware updates, and optional performance optimisation tools. Verified Specifications: – Capacity: 500 GB – Form Factor: M.2 2280 – Interface: PCIe Gen 3.0 x4 / NVMe 1.3 – Sequential Read: Up to 3,500 MB/s – Sequential Write: Up to 3,300 MB/s – Random Read (QD32, 4K): Up to 600,000 IOPS – Random Write (QD32, 4K): Up to 550,000 IOPS – NAND Type: 3-bit MLC (TLC) V-NAND – Cache: 512 MB Low Power DDR4 SDRAM – Controller: Samsung Phoenix – Encryption: AES 256-bit, TCG/Opal, IEEE 1667 – MTBF: 1,500,000 hours – Operating Temperature: 0–70 °C – Voltage: 3.3 V ±5% – Dimensions: 80.15 x 22.15 x 2.38 mm – Warranty: 5 Years