Samsung 990 NVMe 2TB Gen4 SSD
MPN MZ-V9V2T0BW · Brand SAMSUNG · M.2 2280
The Samsung 990 2TB NVMe Gen4 M.2 SSD delivers sequential reads up to 7,250 MB/s and writes up to 6,450 MB/s over PCIe 4.0 x4, with 800 TBW endurance and AES 256-bit encryption — ideal for gaming PCs, creative workstations, and high-capacity laptop upgrades
Inclusive of GST · GST invoice available
Overview
The Samsung 990 2TB NVMe SSD (model MZ-V9V2T0BW) is a PCIe 4.0 x4 NVMe 2.0 M.2 2280 drive engineered for PC builders, content creators, and gamers who need both high throughput and generous capacity in a single compact module. Running on Samsung's in-house controller and Samsung V-NAND flash memory, the 990 delivers sequential read speeds of up to 7,250 MB/s and sequential write speeds of up to 6,450 MB/s. Random performance reaches 850,000 IOPS read and 1,200,000 IOPS write, making the drive responsive under mixed workloads such as game loading, RAW photo editing, and large-project exports. The drive employs a Host Memory Buffer (HMB) cache design rather than dedicated DRAM, which contributes to its efficient power profile. Active read power consumption is rated at 4.3 W and active write at 3.8 W, while idle states drop to 55 mW (PS3 / APST on) or as low as 3 mW (PS4 / L1.2), making it suitable for ultrabooks and power-constrained laptop builds alongside desktop systems. Reliability figures are strong: a rated endurance of 800 TBW (terabytes written) and a mean time between failures (MTBF) of 1.5 million hours underpin the 3-year limited warranty. The drive also supports AES 256-bit full-disk encryption, TCG/Opal V2.0, and Encrypted Drive (IEEE 1667) for data security, plus TRIM, garbage collection, and S.M.A.R.T. monitoring for long-term health. Samsung Magician software lets users monitor drive health, run performance benchmarks, update firmware, and migrate data — all without third-party tools. Verified Specifications: • Capacity: 2 TB • Interface: PCIe 4.0 x4, NVMe 2.0 • Form Factor: M.2 2280 • Controller: Samsung in-house • NAND: Samsung V-NAND • Cache: HMB (Host Memory Buffer) • Sequential Read: 7,250 MB/s • Sequential Write: 6,450 MB/s • Random Read: 850,000 IOPS • Random Write: 1,200,000 IOPS • Active Power (Read / Write): 4.3 W / 3.8 W • Idle Power (PS3 APST on / PS4 L1.2): 55 mW / 3 mW • Endurance (TBW): 800 TB • MTBF: 1.5 million hours • Operating Temperature: 0 °C to 70 °C • Non-Operating Temperature: −40 °C to 85 °C • Dimensions: 80.15 × 22.15 × 2.38 mm (max) • Encryption: AES 256-bit, TCG/Opal V2.0, IEEE 1667 • Warranty: 3 years limited • SKU: MZ-V9V2T0BW
Datasheet
| Warranty | 3 Years |
|---|---|
| Capacity | 2TB |
| Form Factor | M.2 2280 |
| Interface | PCIe Gen4 |
| Tbw | 800 |
| Mtbf | 1.5 million hours |
| NVME | Yes |
| Read | 4.3W |
| Write | 3.8W |
| Period | 3 years limited |
| Series | 990 |
| Humidity | 5% to 95% non-condensing |
| Dimension | Max 80.15 x Max 22.15 x Max 2.38 (mm) |
| Operating | 0°C to 70°C (Measured by S.M.A.R.T. Temperature Proper airflow recommended) |
| Controller | Samsung in-house Controller |
| Ps4 (L1.2) | 3mW |
| Read Speed | Up to 7250MB/s |
| Random Read | 850KIOPS |
| Write Speed | Up to 6450MB/s |
| Cache Memory | HMB(Host Memory Buffer) |
| Ps3(Apst On) | 55mW |
| Random Write | 1,200KIOPS |
| Data Security | AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) |
| Non-Operating | -40°C to 85°C |
| Nand Flash Memory | Samsung V-NAND |
| Supporting Features | TRIM (Required OS support), Garbage Collection, S.M.A.R.T |
| Shock (Non-Operating) | 1,500G(Gravity), duration: 0.5ms, 3 axis |
| Vibration (Non-Operating) | 20~2,000Hz, 20G |
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