SAMSUNG 990 Pro 4TB M.2 NVMe Gen4 Internal Solid State Drive (SSD)

The Samsung 990 Pro 4TB is a PCIe Gen 4.0 x4 NVMe 2.0 M.2 2280 internal solid-state drive engineered for demanding PC gaming and content-creation workloads, as well as PlayStation 5 storage expansion. Powered by a Samsung in-house controller paired with 4 GB of Low Power DDR4 SDRAM cache and Samsung V-NAND TLC flash, the drive delivers sequential read speeds of up to 7,450 MB/s and sequential write speeds of up to 6,900 MB/s, approaching the practical ceiling of the PCIe 4.0 interface. Random performance at queue depth 32 reaches up to 1,600,000 IOPS read and 1,550,000 IOPS write, meaning game asset streaming and large file transfers happen with minimal perceptible latency. Thermal management is handled through a nickel-coated controller and a Dynamic Thermal Guard algorithm that monitors operating temperatures continuously, keeping the drive within its rated 0–70 °C range and helping sustain peak performance during extended sessions. A heat-spreader label on the NAND package adds an additional layer of thermal control. Power consumption sits at an average of 6.5 W at the system level during active operation, with a burst peak of 8.6 W and an idle draw of no more than 55 mW — figures that reflect Samsung’s focus on performance-per-watt efficiency. The drive carries a 5-year limited warranty backed by a 2,400 TBW endurance rating and an MTBF of 1.5 million hours, providing confidence for heavy daily use. Security features include AES 256-bit hardware encryption with TCG/Opal and IEEE 1667 compliance. TRIM, S.M.A.R.T., and Auto Garbage Collection are supported to maintain long-term drive health. Samsung Magician software provides drive monitoring, performance optimisation, firmware updates, and LED customisation. The 990 Pro 4TB ships without a heatsink and without an installation kit; ensure your motherboard M.2 slot supports PCIe 4.0 x4 to achieve rated speeds. Verified Specifications — Part Number: MZ-V9P4T0BW | Capacity: 4,000 GB (rated) | Form Factor: M.2 (2280) | Interface: PCIe Gen 4.0 x4, NVMe 2.0 | NAND: Samsung V-NAND TLC | Cache: Samsung 4 GB LPDDR4 | Sequential Read: up to 7,450 MB/s | Sequential Write: up to 6,900 MB/s | Random Read (4 KB, QD32): up to 1,600,000 IOPS | Random Write (4 KB, QD32): up to 1,550,000 IOPS | Encryption: AES 256-bit, TCG/Opal, IEEE 1667 | Endurance: 2,400 TBW | Warranty: 5-year limited | MTBF: 1.5 million hours | Dimensions: 80 × 22 × 2.3 mm | Weight: max 9.0 g | Operating Temp: 0–70 °C | Shock: 1,500 G / 0.5 ms