Samsung 990 Pro 4TB M.2 NVMe Gen4 SSD

The Samsung 990 Pro 4TB (MZ-V9P4T0BW) is a high-capacity M.2 2280 internal SSD built on the PCIe Gen 4.0 x4 interface with NVMe 2.0 support. Designed for demanding client workloads — including gaming PCs, creative editing, data analysis, and PlayStation 5 — it delivers sequential read speeds of up to 7,450 MB/s and sequential write speeds of up to 6,900 MB/s, approaching the practical ceiling of the PCIe 4.0 interface. At the heart of the drive is Samsung’s proprietary in-house controller paired with 4 GB of low-power DDR4 SDRAM cache. The NAND storage layer uses Samsung’s own V-NAND TLC technology, enabling the high sustained throughput this drive is rated for. Random performance reaches up to 1,600,000 IOPS read and 1,550,000 IOPS write (4 KB, QD32), making application load times and file transfers feel noticeably faster in real-world use. Thermal management is handled through a nickel-coated controller and a Dynamic Thermal Guard algorithm that works alongside a heat-spreader label covering the NAND chips. This combination helps maintain stable performance under extended workloads without throttling. Idle power consumption is rated at a maximum of 55 mW, with average system-level consumption at 6.5 W, rising to a burst peak of 8.6 W. Security features include AES 256-bit hardware encryption with TCG/Opal and IEEE 1667 support (Encrypted Drive class 0). TRIM and S.M.A.R.T. are both supported, and an automatic garbage-collection algorithm helps preserve long-term write efficiency. The drive supports Device Sleep Mode for additional power savings in compatible systems. Samsung Magician software provides drive health monitoring, performance optimisation, firmware updates, and LED customisation tools at no extra cost. Verifiable Specifications: • Model / P/N: 990 PRO PCIe 4.0 NVMe M.2 SSD / MZ-V9P4T0BW • Form Factor: M.2 2280 • Interface: PCIe Gen 4.0 x4, NVMe 2.0 • Rated Capacity: 4,000 GB (1 GB = 1 billion bytes per IDEMA) • NAND: Samsung V-NAND TLC • Controller: Samsung in-house • Cache: Samsung 4 GB Low Power DDR4 SDRAM • Sequential Read: Up to 7,450 MB/s • Sequential Write: Up to 6,900 MB/s • Random Read (4 KB, QD32): Up to 1,600,000 IOPS • Random Write (4 KB, QD32): Up to 1,550,000 IOPS • Random Read (4 KB, QD1): Up to 22,000 IOPS • Random Write (4 KB, QD1): Up to 80,000 IOPS • Dimensions (W×H×D): 80 × 22 × 2.3 mm • Weight: Max 9.0 g • Encryption: AES 256-bit (Class 0), TCG/Opal, IEEE 1667 • MTBF: 1,500,000 hours • Operating Temperature: 0–70 °C • Shock Resistance: 1,500 G / 0.5 ms (half sine) • Allowable Voltage: 3.3 V ± 5% • Avg Power (system): 6.5 W; Burst max: 8.6 W; Idle: Max 55 mW • Warranty: 5-year limited or 2,400 TBW limited • GTIN: 3384036495330