CORSAIR MP600 Elite 4TB M.2 NVME Gen4 Internal Solid State Drive ( SSD )

The Corsair MP600 Elite 4TB is a high-performance M.2 NVMe internal solid-state drive designed for PCIe Gen 4 x4 platforms. Built on the M.2 2280 form factor, it slots directly into compatible motherboards and laptops without requiring a heatsink, making it one of the more universally compatible Gen4 drives available today. At the heart of the MP600 Elite’s performance is its PCIe Gen 4.0 x4 NVMe 1.4 interface, which enables sequential read speeds of up to 7,000 MB/s and sequential write speeds of up to 6,200 MB/s — figures measured under CrystalDiskMark conditions. Random performance is equally impressive, with up to 950,000 IOPS read and up to 1,200,000 IOPS write at QD32 via IOMeter, making the drive well-suited for tasks that involve frequent small-file access such as game loading, OS booting, and application launches. Storage endurance is rated at 2,400 TBW (terabytes written), which provides substantial long-term reliability for power users and content creators working with large media files. The drive operates between 0°C and 65°C and can be stored across a wider range of -40°C to +85°C, ensuring resilience in various system configurations. Shock resistance is rated at 1,500 G, and the drive tolerates vibration across the 20 Hz–2,000 Hz spectrum. The 3D TLC NAND flash technology used in the MP600 Elite balances write endurance with storage density, enabling the 4TB capacity while maintaining consistent performance over time. SMART monitoring support is included for drive health tracking via compatible utilities. Compatibility covers Windows 11, Windows 10, and macOS, and the drive operates at 3.3 V (±5%). Deep sleep power state (DEVSLP PS4) draws fewer than 5 mW, keeping idle power consumption low. Verified Specifications: – Model: CSSD-F4000GBMP600ENH – Capacity: 4TB – Form Factor: M.2 2280 – Interface: PCIe Gen 4.0 x4, NVMe 1.4 – Sequential Read: up to 7,000 MB/s – Sequential Write: up to 6,200 MB/s – Random Read (QD32): up to 950,000 IOPS – Random Write (QD32): up to 1,200,000 IOPS – NAND: 3D TLC – TBW: 2,400 TB – Operating Temperature: 0°C to 65°C – Storage Temperature: -40°C to 85°C – Voltage: 3.3 V ±5% – Weight: 30 g – Warranty: 5 Years