Samsung 990 1TB NVMe M.2 PCIe Gen4 SSD (MZ-V9V1T0BW)

The Samsung 990 NVMe SSD (MZ-V9V1T0BW) brings PCIe Gen 4 performance to the M.2 2280 form factor, delivering sequential read speeds of up to 7,150 MB/s and sequential write speeds of up to 6,450 MB/s. These figures translate to noticeably shorter load times for large games, faster exports of high-resolution video and photo projects, and quicker transfers of sizeable file archives. Powered by a Samsung in-house controller and Samsung V-NAND memory, the 990 manages its workload intelligently using Host Memory Buffer (HMB) caching rather than a dedicated DRAM chip — a design that reduces idle power draw while keeping performance strong. Random performance reaches up to 700K IOPS read and 1,100K IOPS write, supporting responsive multitasking even under mixed workloads. The drive supports AES 256-bit Full Disk Encryption along with TCG/Opal V2.0 and IEEE 1667 Encrypted Drive standards, making it suitable for users who need hardware-level data security. TRIM, S.M.A.R.T, and Garbage Collection are all supported, helping the drive maintain consistent performance over its rated lifespan. Device Sleep Mode is available for power-constrained environments such as laptops. With a 400 TBW (Terabytes Written) endurance rating and a 3-year warranty, the Samsung 990 is positioned as a dependable choice for new PC builds, laptop upgrades, or expanding an existing storage setup. Samsung Magician software is available to monitor drive health, manage firmware updates, and facilitate data migration. Verified Specifications: - Model: MZ-V9V1T0BW - Series: Samsung 990 - Capacity: 1 TB - Form Factor: M.2 2280 - Interface: PCIe Gen 4 NVMe - Sequential Read: Up to 7,150 MB/s - Sequential Write: Up to 6,450 MB/s - Random Read: Up to 700K IOPS - Random Write: Up to 1,100K IOPS - NAND Type: Samsung V-NAND - Controller: Samsung In-house - Cache: HMB (Host Memory Buffer) - Encryption: AES 256-bit, TCG/Opal V2.0, IEEE 1667 - TBW: 400 TB - Warranty: 3 Years - TRIM / S.M.A.R.T / GC: Supported