SAMSUNG 990 Evo 1TB M.2 NVME Gen4 Internal SSD

The Samsung 990 EVO is a 1TB M.2 2280 NVMe internal solid-state drive designed for client PCs used in gaming, content creation, and business workloads. Built on Samsung’s own V-NAND TLC memory and an in-house controller, it delivers sequential read speeds of up to 5,000 MB/s and sequential write speeds of up to 4,200 MB/s. Random read performance reaches up to 680,000 IOPS at QD32 and up to 800,000 IOPS for random writes at QD32, making everyday tasks and file transfers noticeably more responsive. The drive operates over a dual-mode interface — PCIe 4.0 x4 or PCIe 5.0 x2 — running NVMe 2.0, so it is compatible with a wide range of current-generation motherboards. Cache is handled via Host Memory Buffer (HMB), keeping the form factor slim at just 80 x 22 x 2.38 mm and a maximum weight of 9.0 g. Power efficiency is a headline feature of the 990 EVO series. Idle power consumption sits at a typical 60 mW, dropping to just 5 mW in Device Sleep mode; the drive supports Modern Standby so laptops can stay connected and receive notifications without fully waking the storage subsystem. Active average power consumption is approximately 4.9 W (read) and 4.5 W (write). Thermal management is handled by a heat spreader label on the NAND chip working alongside Samsung’s Dynamic Thermal Guard algorithm, which continuously monitors operating temperature to maintain consistent performance during sustained workloads. Rated operating temperature is 0–70 °C, and the drive can withstand shocks of 1,500 G at 0.5 ms (half-sine). Security is covered by AES 256-bit hardware encryption with TCG/Opal and IEEE 1667 support. Drive health and optimisation are managed through Samsung Magician software, which also facilitates data migration and firmware updates. TRIM and S.M.A.R.T. are both supported, and the auto garbage collection algorithm helps maintain long-term write performance. Reliability is rated at 1.5 million hours MTBF. The drive ships with a 5-year limited warranty, or 600 TBW (whichever comes first), for the 1TB capacity. Part number: MZ-V9E1T0BW. Verified Specifications: – Capacity: 1,000 GB (rated) – Form factor: M.2 2280 – Interface: PCIe 4.0 x4 / PCIe 5.0 x2, NVMe 2.0 – NAND: Samsung V-NAND TLC – Controller: Samsung in-house – Cache: HMB (Host Memory Buffer) – Sequential read: up to 5,000 MB/s – Sequential write: up to 4,200 MB/s – Random read (QD32): up to 680,000 IOPS – Random write (QD32): up to 800,000 IOPS – Random read (QD1): up to 20,000 IOPS – Random write (QD1): up to 90,000 IOPS – Idle power: typical 60 mW; device sleep: typical 5 mW – MTBF: 1.5 million hours – Warranty: 5 years / 600 TBW – Dimensions: 80 × 22 × 2.38 mm; weight: max 9.0 g – Encryption: AES 256-bit, TCG/Opal, IEEE 1667 – Operating temperature: 0–70 °C – Shock: 1,500 G / 0.5 ms